• DocumentCode
    1378116
  • Title

    High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55- \\mu m Band

  • Author

    Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
  • Volume
    22
  • Issue
    2
  • fYear
    2010
  • Firstpage
    103
  • Lastpage
    105
  • Abstract
    We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.
  • Keywords
    III-V semiconductors; ground states; indium compounds; laser modes; quantum dot lasers; InAs; broad-area laser diodes; ground-state lasing; high characteristic temperature laser; high quantum dot density; highly stacked quantum-dot laser; pulsed mode; strain compensation; temperature 113 K; temperature 20 °C to 80 °C; wavelength 1.55 μm; wavelength 1529 nm; Characteristic temperature; quantum dot (QD); stacking strain compensation;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2035821
  • Filename
    5373966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1378116