Title :
Exclusive OR/NOR IC for >40 Gbit/s optical transmission systems
Author :
Murata, K. ; Otsuji, T. ; Enoki, T. ; Umeda, Y.
Author_Institution :
NTT Opt. Network Syst. Labs., Kanagawa, Japan
fDate :
4/16/1998 12:00:00 AM
Abstract :
The authors describe an exclusive OR/NOR (XOR) IC which uses 0.1 μm InAlAs-InGaAs-InP HEMTs for >40 Gbit/s optical transmission systems. To obtain high speed operation with small timing jitter, an inductor peaking technique is applied to a symmetrical XOR gate. The IC can operate at up to 80 Gbit/s, and can be used as a 40 GHz timing extraction circuit
Keywords :
HEMT integrated circuits; III-V semiconductors; digital communication; field effect digital integrated circuits; field effect logic circuits; indium compounds; jitter; optical communication equipment; timing circuits; 0.1 micron; 40 GHz; 40 to 80 Gbit/s; HEMTs; InAlAs-InGaAs-InP; XOR IC; exclusive OR/NOR IC; high speed operation; inductor peaking technique; optical transmission systems; symmetrical XOR gate; timing extraction circuit; timing jitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980188
