Electro-optical measurement of high-field conductivity in delta -doped GaAs epitaxial layers

Author

Balynas, Y. ; Stalnionis, A. ; Krotkus, A. ; Troideris, G. ; Lideikis, T.

Author_Institution

Semiconductor Phys Inst., Acad. of Sci., Vilnius, USSR

Volume

27

Issue

1

fYear

1991

Firstpage

2

Lastpage

3

Abstract

An electro-optical sampling technique for high-field conductivity measurement was proposed and electron drift velocity in delta -doped GaAs samples was measured. The authors measured the velocity-field characteristics of 2-DEG in delta -doped structures with DC pulses as short as 30 ps. A Nd³⁺:YAlO₃ laser system was used in the experiments. For stabilising the laser pulse energy the system was equipped with a special Q-switch and a fast electronic feedback loop inside the laser cavity.

Keywords

III-V semiconductors; carrier mobility; electrical conductivity measurement; electronic conduction in crystalline semiconductor thin films; gallium arsenide; high field effects; measurement by laser beam; semiconductor epitaxial layers; 30 ps; DC pulses; GaAs; III-V semiconductors; Nd³⁺:YAlO₃ laser system; Q-switch; YAlO₃:Nd³⁺; conductivity measurement; delta -doped GaAs epitaxial layers; drift velocity measurement; electro-optical sampling technique; electron drift velocity; fast electronic feedback loop; high-field conductivity; laser cavity; laser pulse energy;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910002

Filename

60830