Title :
Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy
Author :
Tsang, W.T. ; Yang, Lei ; Wu, Ming C. ; Chen, Y.K.
Author_Institution :
AT+T Bell Labs., Murray Hill, NJ, USA
Abstract :
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective area epitaxy with no deposition over the SiO2 masks has been routinely obtained with excellent epilayer morphology. Uniform coverage was obtained for regrowth over etched mesas to form buried heterostructures. For growth over etch channels, very unique growth characteristics were obtained. Buried crescent stripes similar to those formed by liquid-phase epitaxy inside channels were also obtained by CBE. These growth characteristics demonstrated the unique of CBE for diode laser fabrication.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductor superlattices; GaInAs-InP; GaInAsP-InP; SiO 2; SiO 2 masks; buried crescent stripes; buried heterostructures; chemical beam epitaxy; diode laser fabrication; epilayer morphology; epitaxial growth; etch channels; etched mesas; patterned substrates; regrowth; selective area epitaxy; superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910003
