Title :
3D RESURF double-gate MOSFET: a revolutionary power device concept
Author :
Udrea, F. ; Popescu, A. ; Milne, W.I.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
4/16/1998 12:00:00 AM
Abstract :
A novel power device concept, the 3-dimensional RESURF double-gate MOSFET (3D RESURF MOSFET), is reported. The structure is based on an extension of the RESURF concept to the third dimension. From numerical simulations and analytical modelling, the 3D RESURF MOSFET is found to offer superior breakdown capability compared to previously reported lateral power devices and challenges state-of-the art vertical devices such as the VDMOSFET
Keywords :
electric breakdown; power MOSFET; semiconductor device models; 3D RESURF double-gate MOSFET; analytical modelling; breakdown capability; numerical simulation; power device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980504
