Title :
Extremely low noise InGaP/GaAs HBT oscillator at C-band
Author :
Perez, Sandra ; Floriot, D. ; Maurin, P ; Bouquet, P. ; Gutierrez, P.M. ; Obregon, J. ; Delage, S.L.
Author_Institution :
Dept. de Fisica Aplicada, Univ. de Salamanca, Spain
fDate :
4/16/1998 12:00:00 AM
Abstract :
A state-of-the-art very low phase noise integrated hybrid dielectric resonator oscillator (DRO) working at 6.7 GHz has been designed and fabricated using a self-aligned InGaP/GaAs HBT as the active device. Very low PM noise has been experimentally obtained: -124 dBc/Hz at 10 kHz off-carrier. This result is compared with other silicon oscillator circuits fabricated with a similar topology. At least a 12 dB improvement for the HBT technology is observed
Keywords :
indium compounds; 6.7 GHz; Al2O3; C-band; InGaP-GaAs; SHF; alumina substrate; dielectric resonator oscillator; hybrid DRO; hybrid MIC; low noise HBT oscillator; phase noise; self-aligned InGaP/GaAs HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980553
