• DocumentCode
    1378336
  • Title

    Extremely low noise InGaP/GaAs HBT oscillator at C-band

  • Author

    Perez, Sandra ; Floriot, D. ; Maurin, P ; Bouquet, P. ; Gutierrez, P.M. ; Obregon, J. ; Delage, S.L.

  • Author_Institution
    Dept. de Fisica Aplicada, Univ. de Salamanca, Spain
  • Volume
    34
  • Issue
    8
  • fYear
    1998
  • fDate
    4/16/1998 12:00:00 AM
  • Firstpage
    813
  • Lastpage
    814
  • Abstract
    A state-of-the-art very low phase noise integrated hybrid dielectric resonator oscillator (DRO) working at 6.7 GHz has been designed and fabricated using a self-aligned InGaP/GaAs HBT as the active device. Very low PM noise has been experimentally obtained: -124 dBc/Hz at 10 kHz off-carrier. This result is compared with other silicon oscillator circuits fabricated with a similar topology. At least a 12 dB improvement for the HBT technology is observed
  • Keywords
    indium compounds; 6.7 GHz; Al2O3; C-band; InGaP-GaAs; SHF; alumina substrate; dielectric resonator oscillator; hybrid DRO; hybrid MIC; low noise HBT oscillator; phase noise; self-aligned InGaP/GaAs HBT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980553
  • Filename
    674941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1378336