Title :
Improved breakdown in LP-MOCVD grown n+-GaAs/δ(P +)-GaInP/n-GaAs heterojunction camel-gate FET
Author :
Lour, W.S. ; Chang, W.L. ; Young, S.T. ; Liu, W.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan-Ocean Univ., Keelung, Taiwan
fDate :
4/16/1998 12:00:00 AM
Abstract :
Fabrication of n+-GaAs/δ(P+)-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A δ(P+)-GaInP layer was employed to offer a high valence band offset as a hole barrier, as well as an enhanced conduction band offset for good electron confinement. A camel diode using this material structure shows a barrier height >1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm2 device
Keywords :
CVD coatings; III-V semiconductors; electric breakdown; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; 17 GHz; 33 V; GaAs-GaInP-GaAs; LP-MOCVD growth; barrier height; breakdown voltage; conduction band offset; n+-GaAs/δ(P+)-GaInP/n-GaAs heterojunction camel-gate FET; transconductance; tri-step doping; unity current gain frequency; valence band offset;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980682
