Title :
Micro-buried structure for electrical isolation formed by hydride vapour phase epitaxy
Author :
Tadokoro, T. ; Kobayashi, F. ; Amano, C. ; Itoh, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/16/1998 12:00:00 AM
Abstract :
A micro-buried structure for electrical isolation has been successfully realised using hydride vapour phase epitaxy (HVPE). The width of the buried region is ~2 μm and the resistivity between each region is ~1 MΩ when the applied voltage is 2 V. It was also found that the semi-insulating buried heterostructure formed by HVPE is useful for reducing reflection at the isolation region
Keywords :
buried layers; isolation technology; semiconductor lasers; vapour phase epitaxial growth; 2 V; SILC-BLD; electrical isolation; hydride vapour phase epitaxy; micro-buried structure; reflection; resistivity; semi-insulating buried heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980554
