Title :
Sub-picosecond wideband efficient saturable absorber created by high energy (200 MeV) irradiation of Au+ ions into bulk GaAs
Author :
Mangeney, J. ; Stelmakh, N. ; Shen, A. ; Lourtioz, J.-M. ; Alexandrou, A. ; Likforman, J.-P. ; Clerc, C. ; Thierry-Mieg, V. ; Lugagne-Delpon, E. ; Oudar, Jean-Louis
Author_Institution :
CNRS, Orsay
fDate :
4/16/1998 12:00:00 AM
Abstract :
The authors demonstrate, using pump-probe experiments, that defects created by a 200 MeV Au+ ion beam in bulk GaAs reduce the relaxation time of the saturable absorption of the material to as little as 200 fs. The sample absorption is modulated over a spectral width of 50 nm. The integrated value of the absorption modulation thus shows the high absorption efficiency of the irradiated material. A very small variation in relaxation time is found when the density of photocreated carriers is increased to ~5×1018cm-3 . This material appears to be very promising for applications in optical processing and ultrafast measurement at high pulse repetition rates
Keywords :
III-V semiconductors; carrier relaxation time; gallium arsenide; gold; high-speed optical techniques; ion implantation; optical saturable absorption; 200 MeV; 200 fs; Au+ ions; GaAs:Au; absorption modulation; bulk III-V semiconductor; density of photocreated carriers; high absorption efficiency; high energy irradiation; high pulse repetition rates; ion implantation; irradiation induced defects; optical processing; pump-probe experiments; relaxation time; saturable absorption; subpicosecond wideband efficient saturable absorber; ultrafast measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980319
