Title :
Extremely high gain 0.15 mu m gate-length InAlAs/InGaAs/InP HEMTs
Author :
Ho, Paul ; Kao, M.Y. ; Chao, P.C. ; Duh, K.H.G. ; Ballingall, J.M. ; Allen, Scott T. ; Smith, P.M.
Author_Institution :
Electron. Lab., General Electric Co., Syracuse, NY, USA
Abstract :
High electron mobility transistors (HEMTs) based on the InAlAs/InGaAs heterojunction grown lattice matched to InP were fabricated with 0.15 mu m T-shaped gates. The use of an undoped InGaAs cap layer in the epitaxial structure leads to excellent gate characteristics and very high transistor gain. At 95 GHz, a maximum available gain of 13.6 dB was measured. A maximum frequency of oscillation fmax of 455 GHz was obtained by extrapolating from 95 GHz at -6 dB/octave. This is the best reported gain performance for any transistor.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.15 micron; 13.6 dB; 455 GHz; 95 GHz; EHF; HEMTs; InAlAs-InGaAs-InP; MM-wave devices; T-shaped gates; epitaxial structure; high transistor gain; millimetre wave region; submicron gate length; undoped InGaAs cap layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910206
