GaInAs camel transistors with current gain above 6 at room temperature

GaInAs camel transistors with a current gain of 6.7 at room temperature have been fabricated for the first time. The layers were grown by MOVPE. High frequency measurements on devices with an emitter area of 64 mu m² give a transit frequency of 1.7 GHz. Hot electron spectroscopy at 100 K shows two peaks of the energy distribution belonging to hot electrons with and without intervalley scattering.