DocumentCode :
1378620
Title :
Transistor 2-terminal switches
Author :
Har´el, Abraham
Author_Institution :
Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Pa.
Volume :
76
Issue :
3
fYear :
1957
fDate :
7/1/1957 12:00:00 AM
Firstpage :
328
Lastpage :
338
Abstract :
A 2-terminal self-biased memory-type switching device is an electronic bistable switch which has only two accessible terminals to all voltage and current sources. Such a switch can be realized with a single multiterminal semiconductor device exhibiting negative resistance, if advantage is taken of the "blocking voltage" concept. The blocking voltage is defined here as the forward voltage at a P-N junction at which the incremental conductance is a hundredfold greater than the incremental conductance at zero voltage. By proper circuit connections, the blocking voltage may be utilized to block injection of minority carriers in a semiconductor device until the voltage applied to the device exceeds a peak value. Such a device may exhibit low or negative a-c resistance after the peak value is exceeded. It is shown in the following discussion how the blocking-voltage concept may be applied to obtain negative resistance behavior from a junction transistor, a point-contact transistor, a modified double-base diode, or a modified tetrode. A few applications, mainly in the telephone field, are also indicated.
Keywords :
P-n junctions; Resistance; Resistors; Semiconductor diodes; Switches; Transistors;
fLanguage :
English
Journal_Title :
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher :
ieee
ISSN :
0097-2452
Type :
jour
DOI :
10.1109/TCE.1957.6372677
Filename :
6372677
Link To Document :
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