Title :
RF extraction method for source/drain overlap and depletion length of deep-submicron RF MOSFETs using intrinsic gate-bulk capacitance
Author :
Kim, J.-Y. ; Ko, B.-H. ; Choi, M.-K. ; Lee, Sang-Rim
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
Abstract :
The source/drain overlap and depletion length in deep-submicron RF multifinger MOSFETs is accurately determined by a new RF method based on the direct extraction of the extrinsic gate-bulk capacitance using S-parameters biased at VGS > VTH and VDS = 0V. This RF method is proposed to remove the serious error of a conventional C-V method due to the influence of the extrinsic capacitance.
Keywords :
MOSFET; C-V method; RF extraction method; S-parameter; deep-submicron RF MOSFET; depletion length; extrinsic capacitance; extrinsic gate-bulk capacitance; intrinsic gate-bulk capacitance; source/drain overlap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2174
