Title :
Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In0.60Ga0.40As/In0.52Al0.48As/InP modulation-doped field-effect transistors
Author :
Lai, Richard ; Bhattacharya, P.K. ; Pavlidis, Dimitris ; Brock, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Monolithically InP-based pin-MODFET front-end photoreceivers realised by molecular beam epitaxial regrowth have been characterised. The FWHM of the temporal response to photoexcitation for the full circuit was 60 ps which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3 dB frequency response of the circuit with an effective input load resistance of 33 Omega is 15.0 GHz. The performance of the pin-MODFET photoreceiver circuit is comparable to the best hybrid circuits with InP-based devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodiodes; receivers; 6.5 GHz; FWHM; In 0.6Ga 0.4As-In 0.52Al 0.48As -InP; bandwidth; frequency response; input load resistance; molecular beam epitaxial regrowth; monolithically integrated planar front end photoreceivers; p-i-n photodiode; pin-MODFET photoreceiver circuit; pseudomorphic MODFET; temporal response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910230
