Title :
An analysis and experimental approach to MOS controlled diodes behavior
Author :
Xu, Zhenxue ; Zhang, Bo ; Huang, Alex Q.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
9/1/2000 12:00:00 AM
Abstract :
The metal oxide semiconductor (MOS)-controlled diode (MCD) is a new class of power semiconductor diode that can achieve ideal diode performance. In this paper, experimental verification of the MCD key concept is presented for the first time by using commercially available power metal oxide semiconductor field effect transistors (MOSFETs) operating as MCDs. Measurements of the reverse recovery currents and reverse recovery charges of these “MCDs” are obtained and compared with the body diodes of the MOSFETs. These measurements suggest that MCDs can reduce the reverse recovery current, storage charge, and switching loss significantly. Optimized MCD performances at 1.2 kV, 2.4 kV, and 4.5 kV are also predicted based on numerical simulations. Ideal performance of the MCD close to that predicted by the device simulation should be obtained once an optimized MCD is developed
Keywords :
charge measurement; electric current measurement; losses; p-i-n diodes; power MOSFET; power semiconductor diodes; switching; 1.2 kV; 2.4 kV; 4.5 kV; MOS controlled diodes; metal oxide semiconductor controlled diode; power MOSFET; power metal oxide semiconductor field effect transistors; power semiconductor diode; reverse recovery charges measurement; reverse recovery current reduction; reverse recovery currents measurement; storage charge reduction; switching loss reduction; Current measurement; FETs; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power semiconductor switches; Schottky diodes; Semiconductor diodes; Switching loss; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
