Title :
Highpower switching of multielectrode broad area lasers
Author :
O´Gorman, J. ; Levi, A.F.J. ; Hobson, W.S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
24 ps optical pulses of peak power in excess of 1.3 watts are continuously generated at GHz repetition rates using a GaAs/AlGaAs single quantum well broad area laser with an intracavity loss modulator. Efficient high power light modulation is also demonstrated with the same structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; optical modulation; semiconductor junction lasers; 1.3 W; 24 ps; EHF; GHz repetition rates; GaAs-AlGaAs single quantum well broad area laser; SHF; high power laser switching; high power light modulation; intracavity loss modulator; multielectrode broad area lasers; optical pulses; peak power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910009
