Title :
Mesa release and deposition used for GaAs-on-Si MESFET fabrication
Author :
De Boeck, J. ; Zou, G. ; Van Rossum, M. ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron. Center, Leuven, Belgium
Abstract :
A report is made on the first devices processed using a novel mesa release and deposition (MRD) technique on hetero-epitaxial GaAs-on-Si. Mesas are etched, released by under-etching and deposited, selfaligned, on their original positions. Standard MESFET processing is performed on the MRD structures demonstrating the suitability of the technique for fabrication of monolithic optoelectronic GaAs devices on Si.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; optical workshop techniques; semiconductor technology; silicon; GaAs-Si; GaAs-on-Si MESFET fabrication; MESFET processing; MRD structures; hetero-epitaxial GaAs-on-Si; integrated optoelectronics fabrication; mesa deposition; mesa etching; mesa release; monolithic optoelectronic GaAs devices on Si; under-etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910015
