• DocumentCode
    1379000
  • Title

    A generalized theory of transistor bias circuits

  • Author

    Hellerman, Herbert

  • Author_Institution
    University of Delaware, Newark, Del., formerly of Syracuse University, Syracuse, N. Y.
  • Volume
    76
  • Issue
    6
  • fYear
    1958
  • Firstpage
    694
  • Lastpage
    697
  • Abstract
    ONE of the important problems met in the design of transistor circuits is how to arrange the bias network to obtain the proper operating point and how to maintain this condition within specified limits, subject to environmental changes such as temperature, or to a range of parameters due to production spread in device manufacture. Several bias circuits have been proposed and are being used which give good performance. The question naturally arises as to what essential features do these circuits have in common? It is the purpose of this paper to introduce a very general method of analyzing bias circuits and begins by first showing that almost all 3-terminal bias circuits can be reduced to the same simple standard form. The analysis for this standard-form circuit will then be presented. Finally, an example drawn from current practice will be given showing the unifying concepts which result from the general theory.
  • Keywords
    Equations; Generators; Insulation; Mathematical model; Power transformer insulation; Standards; Transistors;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1958.6372731
  • Filename
    6372731