Title :
Saturation-mode CMOS transconductor with enhanced tunability and low distortion
Author :
Wilson, G. ; Chan, P.K.
Author_Institution :
Polytech. South West, Devon, UK
Abstract :
A new transconductor based on MOS transistors operating in saturation is presented. Linearisation is based on an offset biased pair in a cross-coupled configuration. Simulation results show that the proposed convertor combines excellent tuning characteristics with a large signal handling capability.
Keywords :
CMOS integrated circuits; active networks; convertors; coupled circuits; linear integrated circuits; tuning; CMOS transconductor; convertor; cross-coupled configuration; large signal handling capability; linearisation; offset biased pair; saturation mode; tunability enhancement; tuning characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910019
