Title :
Perpendicular Magnetic Tunnel Junctions Having CoFeB/CoPt Alloy Layers
Author :
Choi, Gyung-Min ; Min, Byoung-Chul ; Shin, Kyung-Ho
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
3/1/2012 12:00:00 AM
Abstract :
We have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of , we have obtained an effective magnetic anisotropy of and a tunnel magnetoresistance (TMR) of 9.4%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers.
Keywords :
cobalt alloys; crystal structure; electrodes; iron alloys; magnetic anisotropy; magnetic multilayers; magnetic thin films; magnetic tunnelling; magnetoresistance; platinum alloys; CoFeB-CoPt-MgO; alloy layers; capping layer; crystal structure; electrode; magnetic anisotropy; perpendicular magnetic tunnel junctions; tunnel magnetoresistance; Anisotropic magnetoresistance; Annealing; Electrodes; Junctions; Magnetic tunneling; Perpendicular magnetic anisotropy; Tunneling magnetoresistance; Magnetic tunnel junctions (MTJs); perpendicular magnetic anisotropy (PMA); tunnel magnetoresistance (TMR);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2176744
