DocumentCode :
1379489
Title :
Global and Local Virtual Metrology Models for a Plasma Etch Process
Author :
Lynn, Shane A. ; Ringwood, John ; MacGearailt, Niall
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Ireland, Maynooth, Ireland
Volume :
25
Issue :
1
fYear :
2012
Firstpage :
94
Lastpage :
103
Abstract :
Virtual metrology (VM) is the estimation of metrology variables that may be expensive or difficult to measure using readily available process information. This paper investigates the application of global and local VM schemes to a data set recorded from an industrial plasma etch chamber. Windowed VM models are shown to be the most accurate local VM scheme, capable of producing useful estimates of plasma etch rates over multiple chamber maintenance events and many thousands of wafers. Partial least-squares regression, artificial neural networks, and Gaussian process regression are investigated as candidate modeling techniques, with windowed Gaussian process regression models providing the most accurate results for the data set investigated.
Keywords :
Gaussian processes; least squares approximations; measurement systems; neural nets; regression analysis; semiconductor industry; sputter etching; Gaussian process regression; VM scheme; artificial neural network; industrial plasma etch chamber; metrology variable; multiple chamber maintenance event; partial least square regression; plasma etch process; virtual metrology model; windowed VM model; Data models; Ground penetrating radar; Plasmas; Semiconductor device modeling; Semiconductor process modeling; Training; Training data; Gaussian process regression; local modeling; neural network applications; plasma etch; virtual metrology (VM);
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2011.2176759
Filename :
6084764
Link To Document :
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