Effects of operation of Germanium alloy junction transistors above rated conditions

As a part of the investigations and analyses performed at Battelle Memorial Institute for Remington Rand Univac, some exploratory experiments were performed at various operating conditions with type ZJ1¿501 (4JD1A-62) and ZJ11¿501(4JD1A-70) transistors. Both of these transistors are special type 2N123 p-n-p alloy junction high-frequency switching transistors. (The primary physical difference between the ZJ1¿501 and ZJ11¿501 transistors is the thicker base region of the ZJ1¿501.) These exploratory experiments were performed as a portion of a program directed toward the development of accelerated life test procedures for transistors.