Title :
CMOS trimming circuit based on polysilicon fusing
Author :
Kim, O. ; Oh, C.J. ; Kim, K.S.
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
2/19/1998 12:00:00 AM
Abstract :
A trimming circuit based on a conventional CMOS process is presented. This circuit both searches the optimum conditions and writes them by blowing a polysilicon fuse. As this unit cell can be cascaded, only four pins are needed to realise the required resolutions. This circuit is implemented using standard 0.8 μm CMOS technology
Keywords :
CMOS integrated circuits; electric fuses; 0.8 micron; CMOS trimming circuit; Si; cascaded unit cell; polysilicon fusing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980320
