Title :
Process and temperature insensitive GaAs voltage reference
Author :
Frounchi, J. ; Harrold, S.J.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
2/19/1998 12:00:00 AM
Abstract :
A simple GaAs voltage reference has been designed which has low sensitivity to the process parameters, and also has temperature compensated characteristics. The use of this design technique in SCFL digital circuits can result in a higher yield. The design technique can be applied to any IC technology offering square-law FET devices
Keywords :
III-V semiconductors; compensation; field effect logic circuits; gallium arsenide; reference circuits; GaAs; GaAs voltage reference; IC technology; SCFL digital circuit; design; process insensitivity; square-law FET device; temperature compensation; yield;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980201
