• DocumentCode
    1379631
  • Title

    Autocorrelation and ultrafast optical thresholding at 1.5 μm using a commercial InGaAsP 1.3 μm laser diode

  • Author

    Barry, L.P. ; Thomsen, B.C. ; Dudley, J.M. ; Harvey, J.D.

  • Author_Institution
    Dept. of Phys., Auckland Univ., New Zealand
  • Volume
    34
  • Issue
    4
  • fYear
    1998
  • fDate
    2/19/1998 12:00:00 AM
  • Firstpage
    358
  • Lastpage
    360
  • Abstract
    Two-photon absorption in a commercial InGaAsP 1.3 μm Fabry-Perot laser diode has been used for autocorrelation measurements of picosecond pulses at 1.5 μm with average power peak-power products as low as 0.15×10-3 (mW)2. The laser diode has also been observed to possess a sub-nanosecond electrical response suitable for optical thresholding applications
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical correlation; semiconductor lasers; two-photon processes; 1.3 micron; 1.5 micron; InGaAsP; InGaAsP Fabry-Perot laser diode; autocorrelation measurement; picosecond pulse; sub-nanosecond electrical response; two-photon absorption; ultrafast optical thresholding;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980298
  • Filename
    675693