Title :
10-stage “cascaded” InAsSb quantum well laser at 3.9 μm
Author :
Allerman, A.A. ; Kurtz, S.R. ; Biefeld, R.M. ; Baucom, K.C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
2/19/1998 12:00:00 AM
Abstract :
Injection lasers with type I, multiple (or “cascaded”) electron-hole recombination stages have been demonstrated. Laser emission at 3.9 μm was observed up to 170 K. The device had a 10-stage active region with each stage composed of a semi-metal, electron-hole source and three strained InAsSb quantum wells separated by InAsP barriers
Keywords :
III-V semiconductors; electron-hole recombination; indium compounds; quantum well lasers; 170 K; 3.9 micron; InAsSb; electron-hole source; injection laser; multistage cascaded InAsSb quantum well laser; semi-metal; strained quantum well; type I electron-hole recombination stage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980304
