DocumentCode
1379675
Title
10-stage “cascaded” InAsSb quantum well laser at 3.9 μm
Author
Allerman, A.A. ; Kurtz, S.R. ; Biefeld, R.M. ; Baucom, K.C.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
34
Issue
4
fYear
1998
fDate
2/19/1998 12:00:00 AM
Firstpage
369
Lastpage
370
Abstract
Injection lasers with type I, multiple (or “cascaded”) electron-hole recombination stages have been demonstrated. Laser emission at 3.9 μm was observed up to 170 K. The device had a 10-stage active region with each stage composed of a semi-metal, electron-hole source and three strained InAsSb quantum wells separated by InAsP barriers
Keywords
III-V semiconductors; electron-hole recombination; indium compounds; quantum well lasers; 170 K; 3.9 micron; InAsSb; electron-hole source; injection laser; multistage cascaded InAsSb quantum well laser; semi-metal; strained quantum well; type I electron-hole recombination stage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980304
Filename
675700
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