DocumentCode :
1379918
Title :
Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
Author :
Jong, F.C. ; Huang, T.Y. ; Chao, T.S. ; Lin, H.C. ; Wang, M.F. ; Chang, C.Y.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
34
Issue :
4
fYear :
1998
fDate :
2/19/1998 12:00:00 AM
Firstpage :
404
Lastpage :
406
Abstract :
The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N 2O-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed
Keywords :
MOSFET; annealing; dielectric thin films; nitridation; nitrogen compounds; N2O; N2O annealing step; N2O-annealed sacrificial oxide; n-channel MOSFET; nMOSFETs; reverse short-channel effects; short-channel effect suppression;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980207
Filename :
675735
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1379918
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