InGaAsP microdisk lasers on Al/sub x/O/sub y/

Author

Song, D.S. ; Hwang, J.K. ; Kim, C.K. ; Han, I.Y. ; Jang, D.H. ; Lee, Y.H.

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

12

Issue

8

fYear

2000

Firstpage

954

Lastpage

956

Abstract

InGaAsP microdisk lasers are fabricated on Al/sub x/O/sub y/ by wafer fusion. Room-temperature continuous-wave operation with threshold pump power of 1.13 mW has been achieved from a 2.2-μm diameter microdisk laser. The lasing wavelength with incident pump power redshifts at a rate of 0.28 nm/mW which shows the improved thermal characteristics due to the high thermal conductivity of Al/sub x/O/sub y/ bottom layer.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; microdisc lasers; optical fabrication; optical pumping; red shift; semiconductor lasers; thermal conductivity; 1.13 mW; 2.2 mum; 25 C; Al/sub x/O/sub y/; Al/sub x/O/sub y/ bottom layer; AlO; InGaAsP; InGaAsP microdisk lasers; fabrication; incident pump power redshifts; lasing wavelength; microdisk laser; microdisk lasers; room-temperature continuous-wave operation; thermal characteristics; thermal conductivity; threshold pump power; wafer fusion; Indium phosphide; Laser excitation; Laser fusion; Optical pumping; Optical refraction; Oxidation; Pump lasers; Quantum well devices; Semiconductor lasers; Thermal conductivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.867972

Filename

867972