DocumentCode :
1379925
Title :
GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells
Author :
Li, W. ; Lammasniemi, J. ; Kazantsev, A.B. ; Jaakkola, R. ; Mäkelä, T. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ., Finland
Volume :
34
Issue :
4
fYear :
1998
fDate :
2/19/1998 12:00:00 AM
Firstpage :
406
Lastpage :
407
Abstract :
A GaInP/AlInP tunnel diode has been grown by a gas-source molecular beam epitaxy method. A high conductance of 15 mA/cm2 at 2.7 mV has been achieved. Using closely optimised growth conditions very high carrier concentrations, both in GaInP and AlInP have been obtained
Keywords :
gallium compounds; 2.7 mV; GaInP-AlInP; GaInP-AlInP tunnel junction; GaInP-GaAs; GaInP-GaAs tandem solar cells; gas-source MBE; high carrier concentrations; molecular beam epitaxy method; optimised growth conditions; tunnel diode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980324
Filename :
675736
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1379925
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