Title :
AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
Author :
Modak, P. ; D´Hondt, M. ; Delbeke, D. ; Moerman, I. ; Van Daele, P. ; Baets, R. ; Demeester, P. ; Mijlemans, P.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Abstract :
We demonstrate microcavity light emitting diodes (MCLEDs) emitting at 650 nm on Ge substrates. Ge has the advantage of lower cost and higher strength compared to GaAs substrates. The multi-quantum well microcavity devices consisted of AlGaAs-based distributed Bragg reflector (DBR) mirrors, AlGaInP active material with an additional 5-μm p-Al/sub 0.55/Ga/sub 0.45/As current spreading layer on top of the p-DBR. A maximum external quantum efficiency of 4.35% and an optical power higher than 5 mW was obtained for a device with 200-μm diameter. The results indicate the potential use of MCLEDs on Ge for visible LEDs.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; cavity resonators; gallium compounds; indium compounds; light emitting diodes; micro-optics; mirrors; optical fabrication; optical resonators; quantum well devices; semiconductor quantum wells; vapour phase epitaxial growth; 200 mum; 4.35 percent; 5 mW; 5 mum; 650 nm; Al/sub 0.55/Ga/sub 0.45/As; AlGaAs; AlGaAs-based distributed Bragg reflector mirrors; AlGaInP; AlGaInP active material; AlGaInP microcavity light-emitting diodes; GaAs substrates; Ge; Ge substrates; current spread; maximum external quantum efficiency; microcavity light emitting diodes; multi-quantum well microcavity devices; optical power; p-Al/sub 0.55/Ga/sub 0.45/As; visible LEDs; Distributed Bragg reflectors; Gallium arsenide; Germanium; Lattices; Light emitting diodes; Microcavities; Mirrors; Optical devices; Optical materials; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
