Title :
Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting
Author :
Tong, Q.-Y. ; Lee, T.-H. ; Huang, L.-J. ; Chao, Y.-L. ; Gösele, U.
fDate :
2/19/1998 12:00:00 AM
Abstract :
High quality Si and SIC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H-implantation temperatures
Keywords :
elemental semiconductors; hydrogen; ion implantation; semiconductor materials; silicon; silicon compounds; wafer bonding; 400 C; 800 C; H-implantation temperature; Si; Si layer transfer; Si substrate; Si-Si; SiC layer transfer; SiC-Si; glass substrate; high temperature H implantation; lower temperature layer splitting; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980295
