Title :
GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates
Author :
Xin, H.P. ; Welty, R.J. ; Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Novel red light-emitting diodes (LEDs) based on GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure (DH) directly grown on [100] GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red LEDs, this novel LED structure eliminates the complicated steps of etching the light-absorption GaAs substrate and wafer-bonding to a transparent GaP substrate. Based on the uncoated devices made with the heterojunction bipolar transistor masks, the emission efficiency of the DH LEDs is 20 times stronger than that of a GaNP pn homojunction diode.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; light emitting diodes; optical fabrication; semiconductor heterojunctions; (100) GaP substrates; GaAs substrate; GaAs-based AlGaInP red LEDs; GaN/sub 0.011/P/sub 0.989/; GaN/sub 0.011/P/sub 0.989/-GaP; GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure; GaNP; GaNP pn homojunction diode; GaP; GaP substrates; LED structure; RF N radical beam source; double-heterostructure red light-emitting diodes; emission efficiency; etching; fabrication; gas-source molecular beam epitaxy; heterojunction bipolar transistor masks; light-absorption; pn homojunction diode; red light-emitting diodes; transparent GaP substrate; uncoated devices; wafer-bonding; DH-HEMTs; Etching; Gallium nitride; Light emitting diodes; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Nitrogen; Radio frequency; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
