DocumentCode :
1379948
Title :
A 1-V, 16.9 ppm/ ^{\\circ} C, 250 nA Switched-Capacitor CMOS Voltage Reference
Author :
Hsieh, Chun-Yu ; Huang, Hong-Wei ; Chen, Ke-Horng
Author_Institution :
Dept. of Electr. & Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
19
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
659
Lastpage :
667
Abstract :
An ultra low-power, precise voltage reference using a switched-capacitor technique in 0.35-μm CMOS is presented in this paper. The temperature dependence of the carrier mobility and channel length modulation effect can be effectively minimized by using 3.3 and 5 V N-type transistors to operate in the saturation and subthreshold regions, respectively. In place of resistors, a precise reference voltage with flexible trimming capability is achieved by using capacitors. When the supply voltage is 1 V and the temperature is 80°C, the supply current is 250 nA. The line sensitivity is 0.76%/V; the PSRR is -41 dB at 100 Hz and -17 dB at 10 MHz. Moreover, the occupied die area is 0.049 mm2.
Keywords :
CMOS integrated circuits; carrier mobility; low-power electronics; reference circuits; switched capacitor networks; N-type transistors; carrier mobility; channel length modulation effect; current 250 nA; frequency 10 MHz; frequency 100 Hz; line sensitivity; resistors; size 0.35 mum; switched-capacitor CMOS voltage reference; temperature 80 degC; temperature dependence; ultralow-power precise voltage reference; voltage 1 V; voltage 3.3 V; voltage 5 V; CMOS voltage reference; nanocurrent; switched-capacitor;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2009.2038061
Filename :
5378486
Link To Document :
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