DocumentCode :
1380010
Title :
Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates
Author :
Chen, Dakai ; Pease, Ronald ; Kruckmeyer, Kirby ; Forney, James ; Phan, Anthony ; Carts, Martin ; Cox, Stephen ; Burns, Sam ; Albarian, Rafi ; Holcombe, Bruce ; Little, Bradley ; Salzman, James ; Chaumont, Geraldine ; Duperray, Herve ; Ouellet, Al ; Buchn
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Volume :
58
Issue :
6
fYear :
2011
Firstpage :
2983
Lastpage :
2990
Abstract :
We present results on the effects of ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of commercial, radiation hardened, and ELDRS-free devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different part types. The magnitudes of the low dose rate enhancement varied substantially. The most notable case showed dose rate sensitivity in the functional failures for a commercial voltage regulator, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. Radiation hardened and ELDRS-free devices also showed ELDRS at the ultra-low dose rates. An ELDRS-free high power regulator showed a low dose rate enhancement factor of ×33 after 10 krad(Si) for parts irradiated at 0.5 mrad(Si)/s. The enhanced degradation at the ultra-low dose rates present challenges for hardness assurance.
Keywords :
radiation hardening (electronics); voltage regulators; ELDRS-free devices; commercial voltage regulator; enhanced low dose rate sensitivity; functional failures; high power regulator; low dose rate enhancement; radiation hardening; ultra-low dose rates; Bipolar integrated circuits; Degradation; Radiation effects; Radiation hardening; Regulators; Sensitivity analysis; Voltage control; Bipolar; ELDRS; dose rate; radiation hardness;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2171720
Filename :
6084845
Link To Document :
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