Title :
Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs
Author :
El-Mamouni, F. ; Zhang, E.X. ; Pate, N.D. ; Hooten, N. ; Schrimpf, R.D. ; Reed, R.A. ; Galloway, K.F. ; McMorrow, D. ; Warner, J. ; Simoen, E. ; Claeys, C. ; Griffoni, A. ; Linten, D. ; Vizkelethy, G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Through-wafer two-photon absorption laser experiments were performed on bulk FinFETs. Transients show distinct signatures for charge collection from drift and diffusion, demonstrating the contribution of charge generated in the substrate to the charge collection process. This result was validated through heavy ion testing on more advanced bulk FinFETs with fin widths as narrow as 5 nm. The drain region dominates the charge collection, with as much as 45 fC of charge collected in the drain region.
Keywords :
MOSFET; ion beam effects; laser beam effects; bulk FinFET; charge collection; charge collection process; heavy ion testing; heavy ion-induced charge collection; through-wafer two-photon absorption laser experiments; FinFETs; Logic gates; Single event transient; Transient analysis; Bulk FinFET; charge collection; ion-beam-induced-charge-collection (IBICC); single event transient (SET); through-wafer two-photon absorption (TPA);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2171994
