Title :
Microwave performance of InGaAs/InAlAs/InP SISFETs
Author :
Feuer, M.D. ; Kuo, J.M. ; Shunk, S.C. ; Behringer, R.E. ; Chang, Tao-yuan
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
Microwave S-parameter measurements and equivalent-circuit modeling of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP semiconductor-insulator-semiconductor FETs (SISFETs) of 1.1- mu m gate length are discussed. The devices incorporated wide-bandgap buffers, self-aligned contact implants, and refractory air-bridge gates. Their DC I-V characteristics displayed sharp pinchoff, good output conductance of 10-20 mS/ss, and extrinsic transconductance up to 220 ms/mm at room temperature. The maximum unity-current-gain frequency was 27 GHz. Gate resistance was found to be the dominant factor limiting microwave power gain.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; solid-state microwave devices; 1.1 micron; 10 to 20 mS; 220 mS; 27 GHz; DC I-V characteristics; III-V semiconductors; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As-InP; S-parameter measurements; SHF; SISFETs; equivalent-circuit modeling; extrinsic transconductance; gate length; gate resistance; maximum unity-current-gain frequency; microwave power gain; output conductance; refractory air-bridge gates; self-aligned contact implants; semiconductor-insulator-semiconductor FETs; sharp pinchoff; wide-bandgap buffers; FETs; Frequency; Implants; Indium compounds; Indium gallium arsenide; Indium phosphide; Length measurement; Microwave measurements; Temperature; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
