DocumentCode :
1380135
Title :
Optically induced switching in CdZnTe
Author :
Pietralunga, S.M. ; Zappettini, A. ; Milani, A. ; Cerati, L. ; Martinelli, M.
Author_Institution :
Consorzio Ricerche Elaborazione Commutazione Ottica Milano, Milan, Italy
Volume :
12
Issue :
8
fYear :
2000
Firstpage :
1037
Lastpage :
1039
Abstract :
All-optical switching performances of the semiconductor ternary alloy CdZnTe have been characterized, operating on a signal at /spl lambda/=1.5 μm. The physical switching mechanism exploits both the electrooptic effect and near-infrared photoconductivity. The use of CdZnTe improves the recovery time constant by six orders of magnitude when compared to previously tested CdTe-based modules. Control fluences of less than 0.02 nJ/μm2 and extinction ratios as high as 23 dB have been demonstrated when operating in the nanosecond temporal regime.
Keywords :
II-VI semiconductors; cadmium compounds; electro-optical switches; optical communication equipment; optical switches; photoconductivity; zinc compounds; 1.5 mum; CdTe-based modules; CdZnTe; all-optical switching performances; control fluences; electrooptic effect; extinction ratios; nanosecond temporal regime; near-infrared photoconductivity; optically induced switching; physical switching mechanism; recovery time constant; semiconductor ternary alloy; Laser beams; Optical beams; Optical polarization; Optical refraction; Optical sensors; Optical signal processing; Photoconductivity; Tellurium; Testing; Zinc;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.868000
Filename :
868000
Link To Document :
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