A high-speed monolithic silicon photoreceiver fabricated on SOI

Author

Li, R. ; Schaub, J.D. ; Csutak, S.M. ; Campbell, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

12

Issue

8

fYear

2000

Firstpage

1046

Lastpage

1048

Abstract

We report a monolithically integrated optical receiver fabricated on an SOI substrate. The receiver consists of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At V/sub DD/=5 V, the receiver dissipated 37 mW of power with a typical transimpedance gain of 49 dB./spl Omega/. At operating speeds of 622 Mb/s and 1.0 and 2.0 Gb/s, the receiver achieved a bit error ratio of 10/sup -9/ at received powers of -31.6, -25.7, and -17.7 dBm, respectively.

Keywords

MOS integrated circuits; high-speed optical techniques; integrated optoelectronics; optical fabrication; optical receivers; p-i-n photodiodes; preamplifiers; silicon; silicon-on-insulator; 37 mW; 5 V; 622 Mbit/s; NMOS transimpedance preamplifier; SOI; SOI substrate; bit error ratio; high-speed monolithic silicon photoreceiver fabrication; lateral p-i-n photodiode; monolithically integrated optical receiver fabrication; operating speeds; received powers; transimpedance gain; Bit error rate; Costs; MOS devices; Optical fiber LAN; Optical fiber networks; Optical receivers; PIN photodiodes; Photodetectors; Preamplifiers; Silicon on insulator technology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.868003

Filename

868003