Silicon-controlled rectifiers from oxide-masked diffused structures

There is a considerable body of literature on the theoretical and experimental characteristics of 2- and 3-terminal p-n-p-n negative resistance switches.1¿4 This paper describes a 2-impurity simultaneous-diffusion process for producing structures in silicon which are suitable for 2- or 3-terminal signal and power p-n-p-n switches (¿controlled rectifiers¿); the properties of the devices produced by this process are discussed in the following.