• DocumentCode
    1380339
  • Title

    Very high current gain InGaAs/InP heterojunction bipolar transistors grown by metalorganic chemical vapour deposition

  • Author

    Kyono, C.S. ; Gerrard, N.D. ; Pinzone, C.J. ; Maziar, C.M. ; Dupuis, R.D.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    40
  • Lastpage
    41
  • Abstract
    A maximum DC current gain ( beta ) of 2.4*104 and small-signal current gain (hfe) of 4.9*104 were obtained for InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). The excellent HBT gain performance is attributed to the exceptional material quality, the good control over p-type dopant diffusion at the base-emitter heterojunction and the existence of a doping-induced drift field in the base.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; vapour phase epitaxial growth; HBT; HBT gain performance; InGaAs-InP; MOCVD; base-emitter heterojunction; doping-induced drift field; heterojunction bipolar transistors; metalorganic chemical vapour deposition; p-type dopant diffusion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910026
  • Filename
    60854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1380339