High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links

Author

Müllrich, Jens ; Thurner, Herbert ; Müllner, Ernst ; Jensen, Joseph F. ; Stanchina, William E. ; Kardos, M. ; Rein, Hans-Martin

Author_Institution

Ruhr-Univ., Bochum, Germany

Volume

35

Issue

9

fYear

2000

Firstpage

1260

Lastpage

1265

Abstract

A monolithic integrated transimpedance amplifier for the receiver in a 40-Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 k/spl Omega/ in the limiting mode, 10 k/spl Omega/ in the linear mode) the complete amplifier was realized on a single chip. Clear output eye diagrams were measured up to 43 Gb/s under realistic driving conditions. The voltage swing of 0.6 V/sub pp/ at the differential 50 /spl Omega/ output does not change within the demanded input dynamic range of 6 dB. At the upper input current level even 48 Gb/s were achieved. The power consumption is approximately 600 mW at a single supply voltage of -5.5 V.

Keywords

III-V semiconductors; amplifiers; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; optical fiber communication; optical receivers; time division multiplexing; -5.5 V; 40 Gbit/s; 600 mW; InP; InP HBT integrated circuit; dynamic range; eye diagram; gain; optical fiber TDM link; optical receiver; transimpedance amplifier; Dynamic range; Heterojunction bipolar transistors; Integrated optics; Optical amplifiers; Optical receivers; Semiconductor device measurement; Semiconductor optical amplifiers; Stimulated emission; Time division multiplexing; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.868033

Filename

868033