Title :
Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
Author :
Kuo, C.H. ; Chang, L.C. ; Kuo, C.W. ; Chi, G.C.
Author_Institution :
Dept. of Opt. & Photonics, Nat. Central Univ., Chungli, Taiwan
Abstract :
We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.
Keywords :
III-V semiconductors; etching; gallium compounds; light emitting diodes; nanoelectronics; nanostructured materials; nucleation; self-assembly; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; crystal quality; current 20 mA; epilayer; etching mask; light emitting diode; low-temperature nucleation layer; nanoislands; nanorod template; output power; self-assembly; InGaN–GaN; light-emitting diode (LED); nano; template;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2038595
