Photovoltaic MWIR Type-II Superlattice Focal Plane Array on GaAs Substrate

Author

Huang, Edward Kwei-wei ; Delaunay, Pierre-Yves ; Nguyen, Binh-Minh ; Pour, Siamak Abdollahi ; Razeghi, Manijeh

Author_Institution

Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA

Volume

46

Issue

12

fYear

2010

Firstpage

1704

Lastpage

1708

Abstract

Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb substrates, GaAs is an attractive alternative with 8 in wafers commercially available, but is 7.8% lattice mismatched to T2SL. In this paper, we present a photovoltaic T2SL 320 × 256 FPA in the mid-wavelength infrared on GaAs substrate. The FPA attained a median noise equivalent temperature difference of 13 and 10 mK (F# = 2.3) with integration times of 10.02 and 19.06 ms, respectively, at 67 K.

Keywords

focal planes; infrared imaging; optical noise; photovoltaic effects; GaAs; GaAs substrate; integration times; lattice mismatch; median noise; photodetectors; photovoltaic MWIR type-II superlattice focal plane array; temperature 67 K; Arrays; Dark current; Gallium arsenide; Photodetectors; Substrates; Superlattices; Alternative substrate; GaAs infrared; focal plane array; mid-wavelength infrared; photodetectors; type-II superlattice;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2061218

Filename

5638301