Title :
A CW 4-W Ka-band power amplifier utilizing MMIC multichip technology
Author :
Matsunaga, Kohji ; Miura, Ikuo ; Iwata, Naotaka
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper describes a 28-GHz power amplifier with 4.5-W output power under CW operation. The amplifier utilizes four fully matched MMICs, in which 0.35-/spl mu/m-long gate GaAs-based heterojunction FETs are employed. The developed power amplifier also provides a continuous-wave (CW) output power of 3 W over the bandwidth of 2 GHz at Ka-band.
Keywords :
III-V semiconductors; JFET integrated circuits; MMIC power amplifiers; gallium arsenide; 0.35 micron; 28 GHz; 4 W; CW power amplifier; GaAs; GaAs heterojunction FET; Ka-band; MMIC multichip technology; Associate members; Broadband amplifiers; Distributed parameter circuits; FETs; Heterojunctions; Impedance; MMICs; Power amplifiers; Power generation; Power transmission lines;
Journal_Title :
Solid-State Circuits, IEEE Journal of
