DocumentCode :
1380430
Title :
A silicon-controlled rectifier: I ¿ Characteristics and ratings
Author :
Bisson, D. K. ; Dyer, R. F.
Author_Institution :
General Electric Company, Clyde, N. Y.
Volume :
78
Issue :
2
fYear :
1959
fDate :
5/1/1959 12:00:00 AM
Firstpage :
102
Lastpage :
106
Abstract :
The name silicon-controlled rectifier has been given to a new 3-terminal semiconductor device which has electrical characteristics similar to a thyratron. This device has been developed by the Semiconductor Products Department of the General Electric Company and has been given the developmental designation ZJ-39A. Its characteristics are made possible through the use of a p-n-p-n junction configuration. It is capable of handling load currents up to 16 amperes average at peak voltages up to 300 volts. Its fast switching action, small size, and relatively high-current ratings make this new device adaptable to a great many applications. Its characteristics and ratings, which are of utmost importance to the circuit designer, are the subject of this discussion.
Keywords :
Firing; Junctions; Logic gates; Rectifiers; Switches; Temperature distribution; Thermal stability;
fLanguage :
English
Journal_Title :
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher :
ieee
ISSN :
0097-2452
Type :
jour
DOI :
10.1109/TCE.1959.6372965
Filename :
6372965
Link To Document :
بازگشت