• DocumentCode
    1380430
  • Title

    A silicon-controlled rectifier: I ¿ Characteristics and ratings

  • Author

    Bisson, D. K. ; Dyer, R. F.

  • Author_Institution
    General Electric Company, Clyde, N. Y.
  • Volume
    78
  • Issue
    2
  • fYear
    1959
  • fDate
    5/1/1959 12:00:00 AM
  • Firstpage
    102
  • Lastpage
    106
  • Abstract
    The name silicon-controlled rectifier has been given to a new 3-terminal semiconductor device which has electrical characteristics similar to a thyratron. This device has been developed by the Semiconductor Products Department of the General Electric Company and has been given the developmental designation ZJ-39A. Its characteristics are made possible through the use of a p-n-p-n junction configuration. It is capable of handling load currents up to 16 amperes average at peak voltages up to 300 volts. Its fast switching action, small size, and relatively high-current ratings make this new device adaptable to a great many applications. Its characteristics and ratings, which are of utmost importance to the circuit designer, are the subject of this discussion.
  • Keywords
    Firing; Junctions; Logic gates; Rectifiers; Switches; Temperature distribution; Thermal stability;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1959.6372965
  • Filename
    6372965