Title :
Interpretation of quasi-static C-V characteristics of MOSOS capacitors on SOI substrates
Author :
Flandre, D. ; Loo, T. ; Verlinden, P. ; van de Wiele, F.
Author_Institution :
Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed.
Keywords :
MOS integrated circuits; capacitors; integrated circuit technology; metal-insulator-semiconductor devices; MOSOS capacitors; SOI MOS fabrication process; SOI substrates; Si; fabrication; process quality assessment; quasi-static C-V characteristics; two terminal devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910028
