• DocumentCode
    1380533
  • Title

    Interpretation of quasi-static C-V characteristics of MOSOS capacitors on SOI substrates

  • Author

    Flandre, D. ; Loo, T. ; Verlinden, P. ; van de Wiele, F.

  • Author_Institution
    Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed.
  • Keywords
    MOS integrated circuits; capacitors; integrated circuit technology; metal-insulator-semiconductor devices; MOSOS capacitors; SOI MOS fabrication process; SOI substrates; Si; fabrication; process quality assessment; quasi-static C-V characteristics; two terminal devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910028
  • Filename
    60856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1380533