Title :
Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines
Author :
Rawat, Karun ; Ghannouchi, Fadhel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
This paper proposes a design methodology for dual-band Doherty power amplifier (DPA) with performance enhancement using dual-band phase offset lines. In the proposed architecture, 50-dual-band offset lines with arbitrary electric lengths at two frequencies are key components, and a novel analytical design solution has been proposed for their design and implementation. The methodology is validated with the design and fabrication of a 10-W GaN-based DPA for code division multiple access and Worldwide Interoperability for Microwave Access applications at 1960 and 3500 MHz, respectively. The dual-band Doherty amplifier using the proposed design methodology has better performance than the current state of the art. The peak drain efficiency of the amplifier is 59.5% at the first frequency and 49.6% at the second frequency of operation. Compared to balanced mode operation, there is an improvement of more than 10% in drain efficiencies, around 6.5-dB back-off, at both frequencies.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; microwave power amplifiers; wide band gap semiconductors; DPA; GaN; analytical design solution; arbitrary electric lengths; code division multiple access; design methodology; dual-band Doherty power amplifier; dual-band offset lines; efficiency 49.6 percent; efficiency 59.5 percent; frequency 1960 MHz; frequency 3500 MHz; power 10 W; worldwide interoperability for microwave access; Circuit faults; Design methodology; Dual band; Impedance; Power amplifiers; Power transmission lines; Dispersive structure; Doherty power amplifier (DPA); dual band; phase offset lines;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2011.2176695