DocumentCode :
1380622
Title :
Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective 
-ohmic Contact and Periodic Indium–Zinc–Oxide Nano-Wells
Author :
Kuo, Der-Min ; Wang, Shui-Jinn ; Uang, Kai-Ming ; Chen, Tron-Min ; Kuo, Hon-Yi ; Lee, Wei-Chi ; Wang, Pei-Ren
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
22
Issue :
5
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
338
Lastpage :
340
Abstract :
Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p -ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.
Keywords :
III-V semiconductors; annealing; gallium compounds; light emitting diodes; masks; ohmic contacts; wide band gap semiconductors; 2D mask; GaN; annealing; current spreading layer; highly reflective P-ohmic contact; indium-zinc-oxide; light extraction; periodic nanowells; polystyrene nanospheres; vertical GaN LED; GaN-based; light-emitting diode (LED); nano; ohmic contact; polystyrene (PS); power conversion; reflectivity; vertical;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2039641
Filename :
5378587
Link To Document :
