DocumentCode :
1380660
Title :
Growth and Characteristics of Yb-doped {\\rm Y}_{3}{\\rm Ga}_{5}{\\rm O}_{12} Laser Crystal
Author :
Yu, Haohai ; Wu, Kui ; Yao, Bin ; Zhang, Huaijin ; Wang, Zhengping ; Wang, Jiyang ; Zhang, Yongdong ; Wei, Zhiyi ; Zhang, Zhiguo ; Zhang, Xingyu ; Jiang, Minhua
Author_Institution :
State Key Lab. of Crystal Mater. & Inst. of Crystal Mater., Shandong Univ., Jinan, China
Volume :
46
Issue :
12
fYear :
2010
Firstpage :
1689
Lastpage :
1695
Abstract :
Ytterbium (Yb) doped rare-earth garnet Y3Ga5O12 (YGG) single crystal was grown by the optical floating zone method for the first time, to our knowledge. Its structure and cell parameter were determined by X-ray powder diffraction. The thermal properties of Yb:YGG, including specific heat, thermal expansion coefficient, thermal diffusion coefficient, and thermal conductivity, were investigated. The optical properties of the crystal were also studied and the effective gain cross sections were calculated. With the crystal cut along the 〈111〉 direction, laser performance was also demonstrated by using a laser diode as the pump source. All the results show that Yb:YGG can be an excellent laser medium for applications to tunable and ultrafast pulsed lasers.
Keywords :
X-ray diffraction; crystal growth from melt; crystal structure; fluorescence; garnets; infrared spectra; optical materials; optical pumping; solid lasers; specific heat; thermal conductivity; thermal diffusion; thermal expansion; ytterbium; yttrium compounds; zone melting; X-ray powder diffraction; Y3Ga5O12:Yb; crystal growth; crystal structure; laser diode; optical floating zone; optical properties; pump source; specific heat; thermal conductivity; thermal diffusion coefficient; thermal expansion coefficient; tunable pulsed lasers; ultrafast pulsed lasers; ytterbium doped rare-earth garnet single laser crystal; Absorption; Crystals; Pump lasers; Temperature measurement; Thermal conductivity; Thermal expansion; Ytterbium; Optical materials; solid lasers; ytterbium compounds;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2010.2059373
Filename :
5638347
Link To Document :
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