Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature

Author

Zhou, W.D. ; Sabarinathan, J. ; Kochman, B. ; Berg, E. ; Qasaimeh, O. ; Pang, S. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

36

Issue

18

fYear

2000

fDate

8/31/2000 12:00:00 AM

Firstpage

1541

Lastpage

1542

Abstract

An electrically injected defect-mode photonic bandgap microcavity surface-emitting laser at room temperature is demonstrated for the first time. 931 nm lasing is observed under pulsed excitation conditions. With a threshold current of 300 μA. Near- and far-field modal characteristics of the emission confirm lasing from the defect-related microcavity in the photonic bandgap crystal

Keywords

distributed Bragg reflector lasers; laser beams; laser modes; microcavity lasers; optical fabrication; photonic band gap; semiconductor lasers; surface emitting lasers; 298 K; 300 muA; 931 nm; defect-related microcavity; electrically injected defect-mode photonic bandgap microcavity surface-emitting laser; electrically injected single-defect photonic bandgap surface-emitting laser; far-field modal characteristics; lasing; near-field modal characteristics; photonic bandgap crystal; pulsed excitation conditions; room temperature; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001131

Filename

868099